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PTFB201402FC-V2-R250
PTFB201402FC-V2-R250Reference image

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Mfr. #:
PTFB201402FC-V2-R250
Batch:
new
Description:
RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RF LDMOS FET
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity N-Channel
Technology Si
Id-Continuous Drain Current
Vds-Drain-Source Breakdown Voltage 65 ​​V
Rds On-Drain-Source On-Resistance 300 mOhms
Operating Frequency 2010 MHz to 2025 MHz
Gain 16 dB
Output Power 140 W
Minimum Operating Temperature
Maximum Operating Temperature 225 C
Mounting Style SMD/SMT
Package/Case H-37248-4
Package Reel
Other product information

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Tips: Small orders are not expensive, may only need a few dollars, and will not generate tariffs. About 2 weeks of aging; If the delivery is required within a few days, the Courier fee will increase a lot.

In Stock: Inquiry
Qty.Unit PriceExt. Price
250+ $66.5135 $16628.375
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
250
MPQ:
250
Multiples:
1
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