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RF2L42008CG2
RF2L42008CG2Reference image

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Mfr. #:
RF2L42008CG2
Batch:
new
Description:
RF MOSFET Transistor 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity N-Channel
Technology Si
Id-Continuous Drain Current
Vds-Drain-Source Breakdown Voltage 65 ​​V
Rds On-Drain-Source On-Resistance 1.5 Ohms
Operating Frequency 3.6 GHz
Gain 14.5 dB
Output Power 8 W
Minimum Operating Temperature
Maximum Operating Temperature 200 C
Mounting Style SMD/SMT
Package/Case E2-3
Package Reel
Other product information

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In Stock: Inquiry
Qty.Unit PriceExt. Price
300+ $34.7799 $10433.97
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
300
MPQ:
300
Multiples:
1
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