LOGO
Total0Items      Cart Subtotal:$0
LOGO
TGF2979-SM
TGF2979-SMReference image

Images are for reference only

Mfr. #:
TGF2979-SM
Mfr.:
Batch:
new
Description:
RF JFET Transistor 8-12GHz 25W GaN PAE 50% Gain 11dB
Datasheet:
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency DC to 12 GHz
Gain 11 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 32 V
Vgs-Gate-Source Breakdown Voltage - 2.7 V
Id-Continuous Drain Current 1.8 A
Output Power 22 W
Maximum Drain/Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature 225 C
Pd-Power Dissipation 49 W
Mounting Style SMD/SMT
Package/Case QFN-20
Package Tray
Other product information

Please communicate and confirm the freight and customs tax matters before payment.
Tips: Small orders are not expensive, may only need a few dollars, and will not generate tariffs. About 2 weeks of aging; If the delivery is required within a few days, the Courier fee will increase a lot.

In Stock: 50
Qty.Unit PriceExt. Price
1+ $104.9169 $104.9169
25+ $74.2173 $1855.4325
100+ $72.6449 $7264.49
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
50
Minimum:
1
MPQ:
1
Multiples:
1
Copyright © 2016-2025 Shenzhen DeHongXin Technology Co., LTD