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QPD1019
QPD1019Reference image

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Mfr. #:
QPD1019
Mfr.:
Batch:
new
Description:
RF JFET Transistor 2.9-3.3 GHz, 500W, 50V, GaN RF IMFET
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor type HEMT
Technology GaN-on-SiC
Operating frequency 2.9 GHz to 3.3 GHz
Gain 16.3 dB
Transistor polarity N-Channel
Vds-drain-source breakdown voltage 150 V
Vgs-gate-source breakdown voltage - 7 V to 2 V
Id-continuous drain current 15 A
Output power
Maximum drain/gate voltage 55 V
Minimum operating temperature - 40 C
Maximum operating temperature 85 C
Pd-power dissipation 522 W
Mounting style SMD/SMT
Package/case 17.4 mm x 24 mm x 4.31 mm
Package
Other product information

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In Stock: Inquiry
Qty.Unit PriceExt. Price
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Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
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Minimum:
1
MPQ:
1
Multiples:
1
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