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GTVA220701FA-V1-R2
GTVA220701FA-V1-R2Reference image

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Mfr. #:
GTVA220701FA-V1-R2
Batch:
new
Description:
RF Junction Gate Field Effect Transistor (RF JFET) Transistor RF LDMOS FET
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 1805 MHz to 2170 MHz
Gain 22 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 150 V
Vgs-Gate-Source Breakdown Voltage
Id-Continuous Drain Current 13.5 A
Output Power 45 W
Maximum Drain/Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature 225 C
Pd-Power Dissipation
Mounting Style SMD/SMT
Package/Case H-37265J-2
Package Reel
Other product information

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Tips: Small orders are not expensive, may only need a few dollars, and will not generate tariffs. About 2 weeks of aging; If the delivery is required within a few days, the Courier fee will increase a lot.

In Stock: Inquiry
Qty.Unit PriceExt. Price
250+ $83.2760 $20819
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
250
MPQ:
250
Multiples:
1
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