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QPD1008L
QPD1008LReference image

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Mfr. #:
QPD1008L
Mfr.:
Batch:
new
Description:
RF JFET Transistor DC-3.2GHz 120W 50V SSG 17.5dB GaN
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 3.2 GHz
Gain 17.5 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 50 V
Vgs-Gate-Source Breakdown Voltage 145 V
Id-Continuous Drain Current 4 A
Output Power 162 W
Maximum Drain/Gate Voltage
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 85 C
Pd-Power Dissipation 127 W
Mounting Style Screw Mount
Package/Case NI-360
Package Tray
Other product information

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In Stock: 68
Qty.Unit PriceExt. Price
1+ $385.8854 $385.8854
25+ $257.2638 $6431.595
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
68
Minimum:
1
MPQ:
1
Multiples:
1
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