LOGO
Total0Items      Cart Subtotal:$0
LOGO
CGHV40180F
CGHV40180FReference image

Images are for reference only

Mfr. #:
CGHV40180F
Batch:
new
Description:
RF JFET TransistorGaN HEMT
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN
Operating Frequency DC to 1000 MHz
Gain 20.3 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 125 V
Vgs-Gate-Source Breakdown Voltage - 10 V, 2 V
Id-Continuous Drain Current 18 A
Output Power 180 W
Maximum Drain/Gate Voltage -
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 150 W
Mounting Style Screw Mount
Package/Case 440223
Package Tray
Other product information

Please communicate and confirm the freight and customs tax matters before payment.
Tips: Small orders are not expensive, may only need a few dollars, and will not generate tariffs. About 2 weeks of aging; If the delivery is required within a few days, the Courier fee will increase a lot.

In Stock: 31
Qty.Unit PriceExt. Price
1+ $355.0392 $355.0392
10+ $344.3634 $3443.634
25+ $342.8766 $8571.915
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
31
Minimum:
1
MPQ:
1
Multiples:
1
Copyright © 2016-2025 Shenzhen DeHongXin Technology Co., LTD