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CGH40006P
CGH40006PReference image

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Mfr. #:
CGH40006P
Batch:
new
Description:
RF JFET TransistorGaN HEMT DC-6.0GHz, 6 Watt
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor type HEMT
Technology GaN
Operating frequency 2 GHz to 6 GHz
Gain 13 dB
Transistor polarity N-Channel
Vds-Drain-Source Breakdown Voltage 120 V
Vgs-Gate-Source Breakdown Voltage - 10 V to 2 V
Id-Continuous Drain Current 0.75 A
Output Power 9 W
Maximum Drain/Gate Voltage -
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation -
Mounting Style SMD/SMT
Package/Case 440109
Package Tray
Other product information

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In Stock: 253
Qty.Unit PriceExt. Price
1+ $67.4623 $67.4623
10+ $63.3840 $633.84
25+ $61.3397 $1533.4925
50+ $56.8381 $2841.905
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
253
Minimum:
1
MPQ:
1
Multiples:
1
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